NTE227

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Qualification Status :

Not Qualified

Current - Collector (Ic) (Max) :

100 mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 10V

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN

Surface Mount :

No

Reach Compliance Code :

Unknown

Transistor Application :

AMPLIFIER

Configuration :

Single

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Power Dissipation Ambient-Max :

2 W

Supplier Device Package :

TO-237

Pin Count :

3

Number of Elements :

1

Package Shape :

Round

Package :

Bag

ECCN Code :

EAR99

HTS Code :

8541.21.00.95

Terminal Position :

BOTTOM

Frequency - Transition :

200MHz

Manufacturer :

NTE Electronics

Subcategory :

Other Transistors

JEDEC-95 Code :

TO-237AA

Series :

-

Voltage - Collector Emitter Breakdown (Max) :

300 V

Power - Max :

850 mW

Collector-Emitter Voltage-Max :

300 V

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

1 W

Collector Current-Max (IC) :

0.1 A

DC Current Gain-Min (hFE) :

40

Product Status :

Active

JESD-30 Code :

O-PBCY-T3

Package / Case :

TO-237AA

Current - Collector Cutoff (Max) :

100nA (ICBO)

Transistor Element Material :

SILICON

Operating Temperature :

150°C (TJ)

Vce Saturation (Max) @ Ib, Ic :

1V @ 2mA, 20mA