NTE221

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Mfr.Part #
NTE221
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-206AF, TO-72-4 Metal Can
Datasheet
Download
Description
MOSFET N-CH VHF AMP/MIX
Stock
56
In Stock :
56

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - FETs, MOSFETs - RF
Reach Compliance Code :
Unknown
HTS Code :
8541.21.00.95
Package Shape :
Round
Mounting :
Through Hole
REACH SVHC :
Unknown
Application :
VHF
Voltage - Test :
13 V
Number of Terminals :
4
Input Capacitance :
5.5 pF
Operating Temp Range :
-65C to 175C
Width :
76.2 mm
Highest Frequency Band :
VERY HIGH FREQUENCY BAND
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
20 V
Drain to Source Voltage (Vdss) :
20 V
Number of Pins :
3
Operating Mode :
DUAL GATE, DEPLETION MODE
Weight :
7.257478 g
Package Type :
TO-72
Current Rating (Amps) :
18mA
Noise Figure :
5dB
Screening Level :
Military
Feedback Cap-Max (Crss) :
0.03 pF
Package / Case :
TO-206AF, TO-72-4 Metal Can
Gain :
20dB
RoHS :
Compliant
Gate to Source Voltage (Vgs) :
20 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
4.82 mm
Terminal Position :
BOTTOM
Max Power Dissipation :
400 mW
Voltage - Rated :
20 V
Terminal Form :
Wire
Case Connection :
SOURCE
Supplier Device Package :
TO-72
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
152.4 mm
JEDEC-95 Code :
TO-72
Number of Elements :
1
Power Dissipation :
400 mW
Current - Test :
10 mA
Rad Hardened :
No
Subcategory :
FET General Purpose Power
Series :
-
Pin Count :
4
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Max Operating Temperature :
175 °C
Transistor Application :
AMPLIFIER
Product Status :
Active
Power - Output :
-
Transistor Type :
N-Channel
Channel Mode :
Depletion
Power Dissipation-Max (Abs) :
0.4 W
Frequency :
-
Surface Mount :
No
Channel Type :
N
Manufacturer :
NTE Electronics
JESD-30 Code :
O-MBCY-W4
Power Dissipation (Max) :
400(mW)
Continuous Drain Current (ID) :
18 mA
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
20 V
Power Gain (Typ)@Vds :
17.5(dB)
Min Operating Temperature :
-65 °C
Drain Source Voltage (Max) :
20(V)
Package :
Bag
Configuration :
Single
Introducing Transistors - FETs, MOSFETs - RF NTE Electronics, Inc. NTE221 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-206AF, TO-72-4 Metal Can, Gain:20dB, NTE221 pinout, NTE221 datasheet PDF, NTE221 amp .Beyond Transistors - FETs, MOSFETs - RF NTE Electronics, Inc. NTE221 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE221


20 V TO-206AF, TO-72-4 Metal Can

NTE221 Overview


The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18 mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20 V. And this device has 20 V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20 V in order to maintain normal operation.Operating this transistor requires a 20 V drain to source voltage (Vdss).

NTE221 Features


a continuous drain current (ID) of 18 mA
a drain-to-source breakdown voltage of 20 V voltage
a 20 V drain to source voltage (Vdss)


NTE221 Applications


There are a lot of NTE Electronics, Inc.
NTE221 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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