NTE221
- Mfr.Part #
- NTE221
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-206AF, TO-72-4 Metal Can
- Datasheet
- Download
- Description
- MOSFET N-CH VHF AMP/MIX
- Stock
- 56
- In Stock :
- 56
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Channel Type :
- N
- Power Dissipation-Max (Abs) :
- 0.4 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- AMPLIFIER
- Number of Terminals :
- 4
- Series :
- -
- Package / Case :
- TO-206AF, TO-72-4 Metal Can
- Reach Compliance Code :
- Unknown
- Package :
- Bag
- Operating Temp Range :
- -65C to 175C
- Surface Mount :
- No
- Mount :
- Through Hole
- RoHS :
- Compliant
- Mounting :
- Through Hole
- Width :
- 76.2 mm
- HTS Code :
- 8541.21.00.95
- Input Capacitance :
- 5.5 pF
- Continuous Drain Current (ID) :
- 18 mA
- Number of Elements :
- 1
- Height :
- 4.82 mm
- Current Rating (Amps) :
- 18mA
- Gate to Source Voltage (Vgs) :
- 20 V
- Channel Mode :
- Depletion
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Frequency :
- -
- Highest Frequency Band :
- VERY HIGH FREQUENCY BAND
- Gain :
- 20dB
- Case Connection :
- SOURCE
- Manufacturer :
- NTE Electronics
- Transistor Type :
- N-Channel
- Max Power Dissipation :
- 400 mW
- Length :
- 152.4 mm
- Qualification Status :
- Not Qualified
- Min Operating Temperature :
- -65 °C
- Number of Pins :
- 3
- Screening Level :
- Military
- Operating Mode :
- DUAL GATE, DEPLETION MODE
- Pin Count :
- 4
- Power Dissipation :
- 400 mW
- DS Breakdown Voltage-Min :
- 20 V
- Drain to Source Breakdown Voltage :
- 20 V
- Supplier Device Package :
- TO-72
- Terminal Form :
- Wire
- REACH SVHC :
- Unknown
- Application :
- VHF
- Terminal Position :
- BOTTOM
- Voltage - Rated :
- 20 V
- Max Operating Temperature :
- 175 °C
- Power Gain (Typ)@Vds :
- 17.5(dB)
- Package Shape :
- Round
- Package Type :
- TO-72
- Product Status :
- Active
- Drain Source Voltage (Max) :
- 20(V)
- Weight :
- 7.257478 g
- Power Dissipation (Max) :
- 400(mW)
- Noise Figure :
- 5dB
- Transistor Element Material :
- SILICON
- Voltage - Test :
- 13 V
- Drain to Source Voltage (Vdss) :
- 20 V
- Current - Test :
- 10 mA
- Feedback Cap-Max (Crss) :
- 0.03 pF
- Configuration :
- Single
- Rad Hardened :
- No
- Polarity/Channel Type :
- N-Channel
- Subcategory :
- FET General Purpose Power
- JESD-30 Code :
- O-MBCY-W4
- JEDEC-95 Code :
- TO-72
- Power - Output :
- -
- Datasheets
- NTE221
NTE221 Documents

20 V TO-206AF, TO-72-4 Metal Can
NTE221 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18 mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20 V. And this device has 20 V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20 V in order to maintain normal operation.Operating this transistor requires a 20 V drain to source voltage (Vdss).
NTE221 Features
a continuous drain current (ID) of 18 mA
a drain-to-source breakdown voltage of 20 V voltage
a 20 V drain to source voltage (Vdss)
NTE221 Applications
There are a lot of NTE Electronics, Inc.
NTE221 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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