NTE222

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity :

N

Number of Elements :

1

Package Type :

TO-72

Vgs (Max) :

-

Continuous Drain Current :

0.05(A)

Feedback Cap-Max (Crss) :

0.03 pF

DS Breakdown Voltage-Min :

25 V

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-72

Subcategory :

FET General Purpose Power

Drain-Source On-Volt :

25(V)

Drain to Source Voltage (Vdss) :

25 V

Package :

Bag

Drive Voltage (Max Rds On, Min Rds On) :

-

Pin Count :

4

Power Gain-Min (Gp) :

14 dB

Current - Continuous Drain (Id) @ 25°C :

50mA (Tj)

Operating Temperature Classification :

Military

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Qualification Status :

Not Qualified

Package / Case :

TO-206AF, TO-72-4 Metal Can

Polarity/Channel Type :

N-Channel

HTS Code :

8541.21.00.95

Operating Temperature :

-65°C ~ 175°C (TJ)

Product Status :

Active

FET Feature :

-

Terminal Position :

BOTTOM

Series :

-

Type :

Small Signal

Operating Temp Range :

-65C to 175C

Mounting :

Through Hole

Supplier Device Package :

TO-72

Input Capacitance (Ciss) (Max) @ Vds :

3300 pF @ 15 V

Vgs(th) (Max) @ Id :

4V @ 20µA

Mounting Type :

Through Hole

Surface Mount :

No

Operating Mode :

DUAL GATE, DEPLETION MODE

Rds On (Max) @ Id, Vgs :

-

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

JESD-30 Code :

O-MBCY-W4

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

NTE Electronics

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

0.33 W

Power Dissipation :

0.36(W)

Power Dissipation (Max) :

360mW (Ta), 1.2mW (Tc)

Rad Hardened :

No

Number of Terminals :

4

Terminal Form :

Wire

FET Type :

N-Channel

Package Shape :

Round