NTE224

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Max Collector Current :

2 A

Power - Max :

10W

Package Shape :

Round

Voltage - Collector Emitter Breakdown (Max) :

60V

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

60 V

Case Connection :

COLLECTOR

Supplier Device Package :

TO-39 W/flange?

Number of Terminals :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA, 5V

Current - Collector (Ic) (Max) :

2A

Noise Figure (dB Typ @ f) :

-

Configuration :

Single

Polarity/Channel Type :

NPN

Surface Mount :

No

Package :

Bag

Emitter Base Voltage (VEBO) :

4 V

Min Operating Temperature :

-65 °C

Max Operating Temperature :

175 °C

Number of Pins :

4

Manufacturer :

NTE Electronics

Transistor Element Material :

SILICON

Power Dissipation Ambient-Max :

10 W

Product Status :

Active

Mount :

Through Hole

RoHS :

Non-Compliant

Pin Count :

3

Package / Case :

TO-39 W/flange?

Operating Temperature :

175°C (TJ)

Series :

-

Transistor Application :

AMPLIFIER

Gain :

-

Collector Current-Max (IC) :

2 A

JESD-30 Code :

O-MBFM-P3

ECCN Code :

EAR99

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Mounting Type :

Through Hole

Number of Elements :

1

Subcategory :

Other Transistors

Terminal Position :

BOTTOM

HTS Code :

8541.29.00.75

Frequency - Transition :

300MHz

Terminal Form :

PIN/PEG

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

10 W