NTE224

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

RoHS :

Non-Compliant

Number of Terminals :

3

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

10 W

Surface Mount :

No

Power Dissipation Ambient-Max :

10 W

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

4 V

Max Operating Temperature :

175 °C

Subcategory :

Other Transistors

Package :

Bag

Number of Pins :

4

Terminal Form :

PIN/PEG

Package Shape :

Round

Series :

-

HTS Code :

8541.29.00.75

Gain :

-

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

JESD-30 Code :

O-MBFM-P3

Voltage - Collector Emitter Breakdown (Max) :

60V

Reach Compliance Code :

Unknown

Collector Base Voltage (VCBO) :

60 V

Power - Max :

10W

Product Status :

Active

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA, 5V

Mount :

Through Hole

Noise Figure (dB Typ @ f) :

-

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

2A

Operating Temperature :

175°C (TJ)

Configuration :

Single

ECCN Code :

EAR99

Package / Case :

TO-39 W/flange?

Terminal Position :

BOTTOM

Max Collector Current :

2 A

Manufacturer :

NTE Electronics

Supplier Device Package :

TO-39 W/flange?

Pin Count :

3

Case Connection :

COLLECTOR

Number of Elements :

1

Collector Current-Max (IC) :

2 A

Mounting Type :

Through Hole

Frequency - Transition :

300MHz

Min Operating Temperature :

-65 °C