NTE224

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

RoHS :

Non-Compliant

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

4 V

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

60V

Operating Temperature :

175°C (TJ)

Surface Mount :

No

Min Operating Temperature :

-65 °C

JESD-30 Code :

O-MBFM-P3

Power Dissipation-Max (Abs) :

10 W

Series :

-

Max Collector Current :

2 A

Pin Count :

3

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Qualification Status :

Not Qualified

Terminal Position :

BOTTOM

Noise Figure (dB Typ @ f) :

-

Transistor Type :

NPN

HTS Code :

8541.29.00.75

Current - Collector (Ic) (Max) :

2A

Power - Max :

10W

Number of Elements :

1

Mount :

Through Hole

Configuration :

Single

Max Operating Temperature :

175 °C

Package / Case :

TO-39 W/flange?

Power Dissipation Ambient-Max :

10 W

Gain :

-

Case Connection :

COLLECTOR

Manufacturer :

NTE Electronics

Transistor Application :

AMPLIFIER

Collector Current-Max (IC) :

2 A

Package Shape :

Round

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA, 5V

Supplier Device Package :

TO-39 W/flange?

Frequency - Transition :

300MHz

Subcategory :

Other Transistors

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Package :

Bag

Terminal Form :

PIN/PEG

Collector Base Voltage (VCBO) :

60 V

Product Status :

Active

Number of Terminals :

3

Number of Pins :

4