NTE219

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector-Base Voltage :

100(V)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A, 4V

JEDEC-95 Code :

TO-3

Operating Temperature Classification :

Military

Supplier Device Package :

TO-3

Package Shape :

Round

Transistor Polarity :

PNP

Manufacturer :

NTE Electronics

Frequency - Transition :

2.5MHz

Number of Terminals :

2

Terminal Form :

PIN/PEG

Pin Count :

2 +Tab

DC Current Gain-Min (hFE) :

5

Power Dissipation Ambient-Max :

115 W

Collector Current (DC) :

15(A)

Number of Elements :

1

Product Status :

Active

Configuration :

Single

Reach Compliance Code :

Unknown

Terminal Position :

BOTTOM

Mounting :

Through Hole

Operating Temperature :

-65°C ~ 200°C (TJ)

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

60 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Frequency :

2.5(MHz)

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.3A, 10A

Package / Case :

TO-204AA, TO-3

Collector-Emitter Voltage-Max :

60 V

Output Power :

Not Required(W)

Current - Collector (Ic) (Max) :

15 A

Power - Max :

115 W

Operating Temp Range :

-65C to 200C

ECCN Code :

EAR99

DC Current Gain :

20

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

700µA

Subcategory :

Other Transistors

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

15 A

Rad Hardened :

No

Power Dissipation :

115(W)

JESD-30 Code :

O-MBFM-P2

Transistor Type :

PNP

Power Dissipation-Max (Abs) :

150 W

Emitter-Base Voltage :

7(V)

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Series :

-

Package :

Bag

Package Type :

TO-3

Category :

Bipolar Power

Surface Mount :

No