NTE226

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Package Shape :

Round

Voltage - Collector Emitter Breakdown (Max) :

35 V

Manufacturer :

NTE Electronics

Product Status :

Active

Polarity/Channel Type :

PNP

DC Current Gain-Min (hFE) :

50

Surface Mount :

No

Qualification Status :

Not Qualified

Power Dissipation Ambient-Max :

12 W

Current - Collector (Ic) (Max) :

2 A

Configuration :

Single

Series :

-

Terminal Form :

PIN/PEG

Transistor Application :

AMPLIFIER

Collector-Emitter Voltage-Max :

35 V

Power Dissipation-Max (Abs) :

12 W

JESD-30 Code :

O-MBFM-P2

Power - Max :

12 W

Mounting Type :

Through Hole

Frequency - Transition :

-

Number of Terminals :

2

Subcategory :

Other Transistors

Package :

Bag

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 200mA, 1.5V

Transistor Element Material :

GERMANIUM

Operating Temperature :

85°C (TJ)

JEDEC-95 Code :

TO-66

Collector Current-Max (IC) :

2 A

Case Connection :

COLLECTOR

Supplier Device Package :

TO-66

Pin Count :

2

Terminal Position :

BOTTOM

Package / Case :

TO-213AA, TO-66-2

Transistor Type :

PNP

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Current - Collector Cutoff (Max) :

200μA (ICBO)

Vce Saturation (Max) @ Ib, Ic :

-