MUN5235T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Emitter Base (R2) :

47 k Ω

Surface Mount :

yes

Published :

2006

Terminal Form :

Gull wing

Base Part Number :

MUN52**T

REACH SVHC :

Unknown

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Resistor - Base (R1) :

2.2 k Ω

Element Configuration :

Single

hFE Min :

80

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Pbfree Code :

yes

Polarity :

NPN

Pin Count :

3

Continuous Collector Current :

100mA

Max Collector Current :

100mA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

NPN - Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Package / Case :

SC-70, SOT-323

Max Power Dissipation :

202mW

Voltage - Rated DC :

50V

Terminal Position :

Dual

Max Operating Temperature :

150°C

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Power Dissipation :

202mW

Factory Lead Time :

4 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V