MUN5113DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

-50V

Operating Supply Voltage :

50V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Number of Elements :

2

DC Current Gain-Min (hFE) :

80

Element Configuration :

Dual

Package / Case :

SOT-363-6

Lead Free :

Lead Free

Height :

900μm

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Length :

2mm

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Pin Count :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

250mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Published :

2009

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Number of Terminations :

6

Min Operating Temperature :

-55°C

Pbfree Code :

yes

hFE Min :

80

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Width :

1.25mm

Number of Pins :

6

Continuous Collector Current :

-100mA

Max Breakdown Voltage :

50V

Max Output Current :

100mA

Terminal Form :

Gull wing

Polarity :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-100mA

Halogen Free :

Halogen Free