MUN5113DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Gull wing

Surface Mount :

yes

Number of Pins :

6

hFE Min :

80

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

250mW

JESD-609 Code :

e3

Package / Case :

SOT-363-6

Contact Plating :

Tin

Width :

1.25mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Output Current :

100mA

Radiation Hardening :

No

Continuous Collector Current :

-100mA

Collector Emitter Voltage (VCEO) :

50V

REACH SVHC :

No SVHC

Factory Lead Time :

8 Weeks

Number of Elements :

2

Operating Supply Voltage :

50V

Max Breakdown Voltage :

50V

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Length :

2mm

Voltage - Rated DC :

-50V

Transistor Application :

SWITCHING

Published :

2009

DC Current Gain-Min (hFE) :

80

Pbfree Code :

yes

ECCN Code :

EAR99

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

-100mA

Max Operating Temperature :

150°C

Halogen Free :

Halogen Free

Height :

900μm

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Terminations :

6

Polarity :

PNP

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Max Collector Current :

100mA