MUN5113DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Terminations :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Elements :

2

Min Operating Temperature :

-55°C

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Max Output Current :

100mA

Surface Mount :

yes

Continuous Collector Current :

-100mA

Element Configuration :

Dual

Pin Count :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Polarity :

PNP

Published :

2009

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

DC Current Gain-Min (hFE) :

80

Pbfree Code :

yes

Voltage - Rated DC :

-50V

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Height :

900μm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Package / Case :

SOT-363-6

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

50V

Width :

1.25mm

Max Power Dissipation :

250mW

Halogen Free :

Halogen Free

Factory Lead Time :

8 Weeks

Operating Supply Voltage :

50V

Current Rating :

-100mA

Length :

2mm

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Number of Pins :

6

Terminal Form :

Gull wing

Radiation Hardening :

No

Max Collector Current :

100mA

hFE Min :

80

JESD-609 Code :

e3