MUN5113DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Operating Temperature :

150°C

Width :

1.25mm

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Number of Pins :

6

Max Collector Current :

100mA

Halogen Free :

Halogen Free

Max Output Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Length :

2mm

Lead Free :

Lead Free

Operating Supply Voltage :

50V

Published :

2009

Number of Terminations :

6

Max Power Dissipation :

250mW

Polarity :

PNP

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Application :

SWITCHING

Pbfree Code :

yes

Package / Case :

SOT-363-6

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

hFE Min :

80

Factory Lead Time :

8 Weeks

Current Rating :

-100mA

Height :

900μm

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

-100mA

ECCN Code :

EAR99

Voltage - Rated DC :

-50V

REACH SVHC :

No SVHC

Contact Plating :

Tin

DC Current Gain-Min (hFE) :

80