MUN5113DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

80

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

250mW

Lead Free :

Lead Free

Length :

2mm

Max Breakdown Voltage :

50V

Pin Count :

6

REACH SVHC :

No SVHC

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain-Min (hFE) :

80

ECCN Code :

EAR99

Current Rating :

-100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Pins :

6

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Width :

1.25mm

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Max Operating Temperature :

150°C

Element Configuration :

Dual

Published :

2009

Height :

900μm

Number of Terminations :

6

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SOT-363-6

Polarity :

PNP

Radiation Hardening :

No

Number of Elements :

2

Pbfree Code :

yes

Continuous Collector Current :

-100mA

Operating Supply Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Voltage - Rated DC :

-50V

Halogen Free :

Halogen Free

Max Output Current :

100mA