MUN5113DW1T1G
- Mfr.Part #
- MUN5113DW1T1G
- Manufacturer
- onsemi
- Package / Case
- SOT-363-6
- Datasheet
- Download
- Description
- TRANS 2PNP PREBIAS 0.25W SOT363
- Stock
- 347
- In Stock :
- 347
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Number of Pins :
- 6
- hFE Min :
- 80
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 250mW
- JESD-609 Code :
- e3
- Package / Case :
- SOT-363-6
- Contact Plating :
- Tin
- Width :
- 1.25mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Output Current :
- 100mA
- Radiation Hardening :
- No
- Continuous Collector Current :
- -100mA
- Collector Emitter Voltage (VCEO) :
- 50V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 2
- Operating Supply Voltage :
- 50V
- Max Breakdown Voltage :
- 50V
- Element Configuration :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Length :
- 2mm
- Voltage - Rated DC :
- -50V
- Transistor Application :
- SWITCHING
- Published :
- 2009
- DC Current Gain-Min (hFE) :
- 80
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -100mA
- Max Operating Temperature :
- 150°C
- Halogen Free :
- Halogen Free
- Height :
- 900μm
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Number of Terminations :
- 6
- Polarity :
- PNP
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Max Collector Current :
- 100mA
- Datasheets
- MUN5113DW1T1G

MUN5113DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
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