MUN5113DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

PNP

Max Power Dissipation :

250mW

Voltage - Rated DC :

-50V

Max Operating Temperature :

150°C

Number of Elements :

2

Length :

2mm

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

hFE Min :

80

Pin Count :

6

Max Output Current :

100mA

Lead Free :

Lead Free

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Height :

900μm

Max Breakdown Voltage :

50V

Contact Plating :

Tin

Operating Supply Voltage :

50V

Package / Case :

SOT-363-6

Min Operating Temperature :

-55°C

Number of Pins :

6

Published :

2009

Number of Terminations :

6

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

50V

Width :

1.25mm

DC Current Gain-Min (hFE) :

80

Continuous Collector Current :

-100mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current Rating :

-100mA

Radiation Hardening :

No

Max Collector Current :

100mA

Element Configuration :

Dual

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free