MUN5113DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

yes

Number of Terminations :

6

Operating Supply Voltage :

50V

Package / Case :

SOT-363-6

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Collector Current :

-100mA

Max Power Dissipation :

250mW

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Max Output Current :

100mA

hFE Min :

80

Width :

1.25mm

Height :

900μm

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Contact Plating :

Tin

Max Breakdown Voltage :

50V

Element Configuration :

Dual

Max Collector Current :

100mA

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Pin Count :

6

Lead Free :

Lead Free

Length :

2mm

Pbfree Code :

yes

Number of Pins :

6

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Voltage - Rated DC :

-50V

Number of Elements :

2

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-100mA

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain-Min (hFE) :

80

Published :

2009

Packaging :

Tape and Reel (TR)

Polarity :

PNP

Factory Lead Time :

8 Weeks