MUN5112T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Pins :

3

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Continuous Collector Current :

100mA

JESD-609 Code :

e3

Surface Mount :

yes

Voltage - Rated DC :

-50V

Resistor - Emitter Base (R2) :

22 k Ω

Max Operating Temperature :

150°C

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

202mW

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

60

Resistor - Base (R1) :

22 k Ω

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Mounting Type :

Surface Mount

Pin Count :

3

Number of Terminations :

3

Min Operating Temperature :

-55°C

Transistor Type :

PNP - Pre-Biased

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2006

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Base Part Number :

MUN51**T

Polarity :

PNP

Power Dissipation :

202mW

Factory Lead Time :

4 Weeks

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Collector Current :

100mA

Current Rating :

-100mA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Terminal Position :

Dual

Number of Elements :

1

Pbfree Code :

yes

Lead Free :

Lead Free

Package / Case :

SC-70, SOT-323