MUN5112T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power Dissipation :

202mW

Transistor Application :

SWITCHING

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

22 k Ω

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Voltage - Rated DC :

-50V

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Current Rating :

-100mA

Resistor - Emitter Base (R2) :

22 k Ω

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Terminal Form :

Gull wing

Published :

2006

Radiation Hardening :

No

Max Power Dissipation :

202mW

Number of Terminations :

3

Surface Mount :

yes

Transistor Type :

PNP - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Number of Pins :

3

Halogen Free :

Halogen Free

Max Collector Current :

100mA

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

50V

Base Part Number :

MUN51**T

Continuous Collector Current :

100mA

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

hFE Min :

60

Polarity :

PNP

Package / Case :

SC-70, SOT-323

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3