MUN5112T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Application :

SWITCHING

Published :

2006

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Current Rating :

-100mA

Number of Elements :

1

Base Part Number :

MUN51**T

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Max Collector Current :

100mA

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Halogen Free :

Halogen Free

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Mounting Type :

Surface Mount

Number of Terminations :

3

Pin Count :

3

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Package / Case :

SC-70, SOT-323

Max Power Dissipation :

202mW

Continuous Collector Current :

100mA

Max Operating Temperature :

150°C

Voltage - Rated DC :

-50V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

202mW

Resistor - Base (R1) :

22 k Ω

Min Operating Temperature :

-55°C

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Resistor - Emitter Base (R2) :

22 k Ω

Terminal Form :

Gull wing

Surface Mount :

yes

Factory Lead Time :

4 Weeks

hFE Min :

60

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3