MUN5114T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Factory Lead Time :

5 Weeks

Base Part Number :

MUN51**T

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

hFE Min :

80

HTS Code :

8541.21.00.95

Number of Pins :

3

Terminal Form :

Gull wing

Polarity :

PNP

Operating Supply Voltage :

50V

Surface Mount :

yes

Min Operating Temperature :

-55°C

Pin Count :

3

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e3

Number of Terminations :

3

Number of Elements :

1

Element Configuration :

Single

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Max Collector Current :

100mA

Continuous Collector Current :

100mA

Voltage - Rated DC :

-50V

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Max Output Current :

100mA

Peak Reflow Temperature (Cel) :

260

Current Rating :

-100mA

Collector Emitter Voltage (VCEO) :

50V

Current - Collector Cutoff (Max) :

500nA

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

50V

Power Dissipation :

202mW

Transistor Type :

PNP - Pre-Biased

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

47 k Ω

Package / Case :

SC-70, SOT-323

Resistor - Base (R1) :

10 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

202mW

Terminal Position :

Dual

Published :

2004

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V