MUN5114T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

JESD-609 Code :

e3

Max Power Dissipation :

202mW

Resistor - Emitter Base (R2) :

47 k Ω

Max Output Current :

100mA

Max Operating Temperature :

150°C

Operating Supply Voltage :

50V

HTS Code :

8541.21.00.95

Number of Pins :

3

Pbfree Code :

yes

Number of Terminations :

3

Continuous Collector Current :

100mA

Radiation Hardening :

No

Voltage - Rated DC :

-50V

Package / Case :

SC-70, SOT-323

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Published :

2004

Halogen Free :

Halogen Free

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Type :

PNP - Pre-Biased

Factory Lead Time :

5 Weeks

ECCN Code :

EAR99

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

-100mA

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Element Configuration :

Single

Pin Count :

3

hFE Min :

80

Terminal Form :

Gull wing

Lead Free :

Lead Free

Resistor - Base (R1) :

10 k Ω

Base Part Number :

MUN51**T

Terminal Position :

Dual

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Transistor Application :

SWITCHING

Power Dissipation :

202mW