MUN5114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Radiation Hardening :

No

Number of Elements :

1

Max Power Dissipation :

202mW

Voltage - Rated DC :

-50V

Published :

2004

Number of Pins :

3

Resistor - Base (R1) :

10 k Ω

Transistor Type :

PNP - Pre-Biased

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Base Part Number :

MUN51**T

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

47 k Ω

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

3

Operating Supply Voltage :

50V

Terminal Form :

Gull wing

Max Collector Current :

100mA

Pbfree Code :

yes

Polarity :

PNP

Continuous Collector Current :

100mA

JESD-609 Code :

e3

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Factory Lead Time :

5 Weeks

Number of Terminations :

3

HTS Code :

8541.21.00.95

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Output Current :

100mA

Package / Case :

SC-70, SOT-323

Min Operating Temperature :

-55°C

Power Dissipation :

202mW

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

80

Collector Emitter Breakdown Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Current Rating :

-100mA