MMUN2233LT1G
- Mfr.Part #
- MMUN2233LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V SOT23-3
- Stock
- 39,019
- In Stock :
- 39,019
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Collector Emitter Saturation Voltage :
- 250mV
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Max Breakdown Voltage :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 100mA
- Max Output Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Transistor Type :
- NPN - Pre-Biased
- Power Dissipation :
- 246mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Factory Lead Time :
- 4 Weeks
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 10
- hFE Min :
- 80
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 50V
- Termination :
- SMD/SMT
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Height :
- 940μm
- Current - Collector Cutoff (Max) :
- 500nA
- Operating Supply Voltage :
- 50V
- Packaging :
- Cut Tape (CT)
- Published :
- 2004
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 100mA
- Max Power Dissipation :
- 246mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Base Part Number :
- MMUN22**L
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Resistor - Base (R1) :
- 4.7 k Ω
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Length :
- 2.9mm
- Surface Mount :
- yes
- Min Operating Temperature :
- -55°C
- Halogen Free :
- Halogen Free
- Voltage - Rated DC :
- 50V
- Width :
- 1.3mm
- Polarity :
- NPN
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Current Rating :
- 100mA
- Datasheets
- MMUN2233LT1G

MMUN2233LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
MMUN2233LT1G Description
The ON Semiconductor MMUN2232LT1G is a 3-pin SOT-23 (TO236) NPN digital transistor. A single digital transistor and its external resistor bias network are intended to be replaced.
MMUN2233LT1G Features
-
The base input resistor is 10Kohm
-
The base-emitter resistor is 10kohm
-
Collector emitter voltage VCEO of 50VDC
-
Simplifies circuit design
-
Compact board space
-
Reduced component count
-
AEC-Q101 qualified
-
The continuous collector current of 100mAdc
MMUN2233LT1G Applications
-
Industrial
-
Portable Devices
-
Consumer Electronics
-
Power Management
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