MMUN2233LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Termination :

SMD/SMT

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Operating Supply Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

Surface Mount :

yes

Width :

1.3mm

hFE Min :

80

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Length :

2.9mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Collector Emitter Saturation Voltage :

250mV

Max Power Dissipation :

246mW

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Terminal Position :

Dual

Contact Plating :

Tin

Transistor Type :

NPN - Pre-Biased

Max Collector Current :

100mA

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Height :

940μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Resistor - Base (R1) :

4.7 k Ω

Max Output Current :

100mA

Base Part Number :

MMUN22**L

Continuous Collector Current :

100mA

Polarity :

NPN

Min Operating Temperature :

-55°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Terminal Form :

Gull wing

Power Dissipation :

246mW

Collector Emitter Breakdown Voltage :

50V

Pin Count :

3

Current Rating :

100mA

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

3

Number of Elements :

1

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

50V

Voltage - Rated DC :

50V

Radiation Hardening :

No

Published :

2004

Resistor - Emitter Base (R2) :

47 k Ω

Number of Pins :

3