MMUN2233LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

4.7 k Ω

Terminal Form :

Gull wing

Surface Mount :

yes

Width :

1.3mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Polarity :

NPN

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

MMUN22**L

Max Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Packaging :

Cut Tape (CT)

Min Operating Temperature :

-55°C

Length :

2.9mm

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

250mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Element Configuration :

Single

Published :

2004

Max Collector Current :

100mA

JESD-609 Code :

e3

Max Output Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Operating Supply Voltage :

50V

Max Power Dissipation :

246mW

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Pin Count :

3

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Number of Pins :

3

Transistor Type :

NPN - Pre-Biased

Terminal Position :

Dual

hFE Min :

80

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Halogen Free :

Halogen Free

Current Rating :

100mA

Continuous Collector Current :

100mA

Voltage - Rated DC :

50V

Termination :

SMD/SMT

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Height :

940μm

Number of Elements :

1

Power Dissipation :

246mW

Resistor - Emitter Base (R2) :

47 k Ω

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)