MMUN2233LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Voltage - Rated DC :

50V

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Max Collector Current :

100mA

Operating Supply Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Power Dissipation :

246mW

Resistor - Base (R1) :

4.7 k Ω

Termination :

SMD/SMT

Number of Elements :

1

Radiation Hardening :

No

Number of Terminations :

3

Base Part Number :

MMUN22**L

Resistor - Emitter Base (R2) :

47 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Polarity :

NPN

Max Operating Temperature :

150°C

Height :

940μm

Current - Collector Cutoff (Max) :

500nA

Terminal Position :

Dual

REACH SVHC :

No SVHC

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Published :

2004

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Length :

2.9mm

Surface Mount :

yes

Width :

1.3mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current Rating :

100mA

Max Power Dissipation :

246mW

Continuous Collector Current :

100mA

Max Breakdown Voltage :

50V

Max Output Current :

100mA

Halogen Free :

Halogen Free

Transistor Type :

NPN - Pre-Biased

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Collector Emitter Saturation Voltage :

250mV

Transistor Application :

SWITCHING

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

80

Collector Emitter Breakdown Voltage :

50V

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C