MMUN2111LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Factory Lead Time :

4 Weeks

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

HTS Code :

8541.21.00.95

Current - Collector Cutoff (Max) :

500nA

hFE Min :

35

Width :

1.3mm

Base Part Number :

MMUN21**L

Collector Emitter Voltage (VCEO) :

50V

Height :

940μm

ECCN Code :

EAR99

Max Power Dissipation :

246mW

Peak Reflow Temperature (Cel) :

260

Transistor Type :

PNP - Pre-Biased

Number of Terminations :

3

Max Collector Current :

100mA

Power Dissipation :

246mW

Current Rating :

-100mA

Transistor Application :

SWITCHING

Radiation Hardening :

No

Max Output Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

10 k Ω

Published :

2003

Surface Mount :

yes

Terminal Position :

Dual

Halogen Free :

Halogen Free

Resistor - Base (R1) :

10 k Ω

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Max Breakdown Voltage :

50V

Number of Pins :

3

Element Configuration :

Single

Operating Supply Voltage :

50V

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Package / Case :

TO-236-3, SC-59, SOT-23-3

Contact Plating :

Tin

Voltage - Rated DC :

-50V

Collector Emitter Saturation Voltage :

250mV

Max Operating Temperature :

150°C

Length :

2.9mm