MMUN2111LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

10 k Ω

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Max Output Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Continuous Collector Current :

100mA

Factory Lead Time :

4 Weeks

Terminal Position :

Dual

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

Contact Plating :

Tin

Pbfree Code :

yes

Base Part Number :

MMUN21**L

Power Dissipation :

246mW

hFE Min :

35

Max Operating Temperature :

150°C

Voltage - Rated DC :

-50V

Length :

2.9mm

Current Rating :

-100mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

PNP - Pre-Biased

Number of Pins :

3

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Surface Mount :

yes

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

10 k Ω

Halogen Free :

Halogen Free

Width :

1.3mm

Element Configuration :

Single

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Height :

940μm

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Published :

2003

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Min Operating Temperature :

-55°C

Collector Emitter Saturation Voltage :

250mV

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Operating Supply Voltage :

50V

Max Power Dissipation :

246mW

Max Breakdown Voltage :

50V

Pin Count :

3