MMUN2114LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Contact Plating :

Tin

Max Output Current :

100mA

Current Rating :

-100mA

Halogen Free :

Halogen Free

Number of Elements :

1

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

250mV

Published :

2001

Pin Count :

3

Width :

1.4mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Type :

PNP - Pre-Biased

Element Configuration :

Single

Operating Supply Voltage :

50V

Polarity :

PNP

Voltage - Rated DC :

-50V

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Max Power Dissipation :

246mW

Continuous Collector Current :

100mA

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Resistor - Base (R1) :

10 k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 0.21

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Surface Mount :

yes

HTS Code :

8541.21.00.95

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Base Part Number :

MMUN21**L

Terminal Position :

Dual

Number of Terminations :

3

Power Dissipation :

246mW

ECCN Code :

EAR99

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Length :

3.04mm

Max Collector Current :

100mA

Height :

1.01mm

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

47 k Ω

hFE Min :

80

Max Breakdown Voltage :

50V

Collector Emitter Breakdown Voltage :

-50V

Min Operating Temperature :

-55°C