DTC114EKAT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Max Junction Temperature (Tj) :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Max Power Dissipation :

200mW

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation :

200mW

Transition Frequency :

250MHz

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Terminal Position :

Dual

Voltage - Rated DC :

50V

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

300mV

Continuous Collector Current :

50mA

Max Output Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

3

Width :

1.6mm

Operating Supply Voltage :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

hFE Min :

30

Resistor - Base (R1) :

10 k Ω

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e1

Height :

1.3mm

Gain Bandwidth Product :

250MHz

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

10 k Ω

Number of Terminations :

3

Current Rating :

50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Published :

2006

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Mount :

Surface Mount

Max Collector Current :

100mA

Terminal Form :

Gull wing

Length :

2.9mm

Element Configuration :

Single

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN - Pre-Biased

Base Part Number :

DTC114