DRDNB16W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

hFE Min :

56

Operating Supply Voltage :

50V

Transistor Type :

NPN - Pre-Biased + Diode

Mounting Type :

Surface Mount

Weight :

6.010099mg

Current - Collector Cutoff (Max) :

500nA

Emitter Base Voltage (VEBO) :

5V

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Resistor - Base (R1) :

1 k Ω

Max Collector Current :

600mA

Factory Lead Time :

19 Weeks

Polarity :

NPN

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Number of Terminations :

6

Published :

2008

Max Breakdown Voltage :

50V

Frequency - Transition :

200MHz

Height :

1mm

Terminal Form :

Gull wing

JESD-609 Code :

e3

Lead Free :

Lead Free

Max Output Current :

600mA

Pbfree Code :

yes

ECCN Code :

EAR99

Current Rating :

600mA

Mount :

Surface Mount

Length :

2.2mm

Pin Count :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

300mV

Max Power Dissipation :

200mW

Number of Elements :

1

Number of Pins :

6

Terminal Position :

Dual

Base Part Number :

DRDNB16

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

10 k Ω

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

600mA

Transistor Application :

SWITCHING

Min Operating Temperature :

-55°C

Width :

1.35mm

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

200MHz

Voltage - Rated DC :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)