DRDNB16W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Continuous Collector Current :

600mA

Transistor Type :

NPN - Pre-Biased + Diode

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Transition Frequency :

200MHz

Max Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

10 k Ω

ECCN Code :

EAR99

Number of Terminations :

6

Mount :

Surface Mount

Terminal Form :

Gull wing

Max Power Dissipation :

200mW

Published :

2008

Number of Elements :

1

Frequency - Transition :

200MHz

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Current Rating :

600mA

Pin Count :

6

Weight :

6.010099mg

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Voltage (VCEO) :

300mV

Max Operating Temperature :

150°C

Width :

1.35mm

Number of Pins :

6

Length :

2.2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Operating Supply Voltage :

50V

hFE Min :

56

Max Collector Current :

600mA

RoHS Status :

ROHS3 Compliant

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Max Output Current :

600mA

Voltage - Rated DC :

50V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Height :

1mm

Terminal Position :

Dual

Mounting Type :

Surface Mount

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

1 k Ω

Base Part Number :

DRDNB16

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Factory Lead Time :

19 Weeks

Radiation Hardening :

No