MMUN2115LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

10 k Ω

Number of Terminations :

3

hFE Min :

160

Halogen Free :

Halogen Free

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Width :

1.4mm

Pin Count :

3

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

250mV

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Number of Elements :

1

Max Power Dissipation :

400mW

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Terminal Position :

Dual

Transistor Application :

SWITCHING

Length :

3.04mm

Current - Collector Cutoff (Max) :

500nA

Height :

1.01mm

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR

Max Operating Temperature :

150°C

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Max Collector Current :

100mA

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

100mA

Base Part Number :

MMUN21**L

Terminal Form :

Gull wing

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Pbfree Code :

yes

Transistor Type :

PNP - Pre-Biased

Voltage - Rated DC :

-50V

Operating Supply Voltage :

50V

ECCN Code :

EAR99

Current Rating :

100mA

Number of Pins :

3

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Max Output Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Published :

2004

Power Dissipation :

246mW

JESD-609 Code :

e3