MMUN2115LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

400mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Terminal Position :

Dual

Pin Count :

3

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Surface Mount :

yes

Operating Supply Voltage :

50V

Current Rating :

100mA

REACH SVHC :

No SVHC

hFE Min :

160

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Polarity :

PNP

Number of Pins :

3

Transistor Type :

PNP - Pre-Biased

Length :

3.04mm

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

100mA

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Additional Feature :

BUILT-IN BIAS RESISTOR

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

8 Weeks

Width :

1.4mm

Min Operating Temperature :

-55°C

Halogen Free :

Halogen Free

Voltage - Rated DC :

-50V

Power Dissipation :

246mW

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Base Part Number :

MMUN21**L

Continuous Collector Current :

100mA

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1.01mm

Number of Elements :

1

Max Output Current :

100mA

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

250mV

Resistor - Base (R1) :

10 k Ω

Max Breakdown Voltage :

50V

Published :

2004

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA