MMUN2112LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

REACH SVHC :

No SVHC

hFE Min :

60

Min Operating Temperature :

-55°C

Height :

1.01mm

Number of Terminations :

3

Continuous Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Current Rating :

-100mA

Width :

1.4mm

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Collector Emitter Saturation Voltage :

250mV

Length :

3.04mm

Voltage - Rated DC :

-50V

Pin Count :

3

Transistor Type :

PNP - Pre-Biased

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Contact Plating :

Tin

Resistor - Base (R1) :

22 k Ω

Packaging :

Tape and Reel (TR)

Power Dissipation :

246mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

HTS Code :

8541.21.00.95

Element Configuration :

Single

Max Power Dissipation :

246mW

Polarity :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Base Part Number :

MMUN21**L

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

22 k Ω

Current - Collector Cutoff (Max) :

500nA

Number of Pins :

3

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Published :

2001

Radiation Hardening :

No

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Position :

Dual