MMUN2211LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Width :

1.3mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Pin Count :

3

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Height :

940μm

Published :

2004

Operating Supply Voltage :

50V

Transistor Application :

SWITCHING

Voltage - Rated DC :

50V

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

246mW

Transistor Type :

NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Number of Pins :

3

Base Part Number :

MMUN22**L

Halogen Free :

Halogen Free

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

100mA

ECCN Code :

EAR99

Current Rating :

100mA

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Power Dissipation :

246mW

Polarity :

NPN

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Saturation Voltage :

250mV

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

hFE Min :

35

Resistor - Base (R1) :

10 k Ω

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Lead Free :

Lead Free

Max Output Current :

100mA

REACH SVHC :

No SVHC

Number of Terminations :

3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Elements :

1

Max Collector Current :

100mA

Element Configuration :

Single

Max Breakdown Voltage :

50V

Weight :

1.437803g

Resistor - Emitter Base (R2) :

10 k Ω

RoHS Status :

ROHS3 Compliant

Length :

2.9mm