MMUN2113LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Current Rating :

-100mA

Polarity :

PNP

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Max Output Current :

100mA

Resistor - Base (R1) :

47 k Ω

Surface Mount :

yes

Min Operating Temperature :

-55°C

Voltage - Rated DC :

-50V

Number of Elements :

1

Max Collector Current :

100mA

Element Configuration :

Single

Current - Collector Cutoff (Max) :

500nA

Number of Pins :

3

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

2.9mm

Base Part Number :

MMUN21**L

Published :

2008

Pbfree Code :

yes

Pin Count :

3

Resistor - Emitter Base (R2) :

47 k Ω

ECCN Code :

EAR99

Max Operating Temperature :

150°C

hFE Min :

80

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Operating Supply Voltage :

50V

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

250mV

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

Width :

1.3mm

Max Power Dissipation :

246mW

Power Dissipation :

400mW

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Height :

940μm

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Transistor Type :

PNP - Pre-Biased