MMUN2113LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Voltage - Rated DC :

-50V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Pins :

3

Max Output Current :

100mA

Height :

940μm

Mounting Type :

Surface Mount

Max Power Dissipation :

246mW

Min Operating Temperature :

-55°C

Pbfree Code :

yes

Operating Supply Voltage :

50V

Width :

1.3mm

Halogen Free :

Halogen Free

Current - Collector Cutoff (Max) :

500nA

Power Dissipation :

246mW

Published :

2001

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

250mV

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

hFE Min :

80

Resistor - Emitter Base (R2) :

47 k Ω

Collector Emitter Breakdown Voltage :

50V

Current Rating :

-100mA

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Length :

2.9mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Terminal Form :

Gull wing

Polarity :

PNP

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Transistor Application :

SWITCHING

Resistor - Base (R1) :

47 k Ω

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Base Part Number :

MMUN21**L

Surface Mount :

yes

Max Collector Current :

100mA

HTS Code :

8541.21.00.95

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Max Operating Temperature :

150°C

Pin Count :

3

Transistor Type :

PNP - Pre-Biased