MMUN2113LT1G
- Mfr.Part #
- MMUN2113LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 50V SOT23-3
- Stock
- 8,990
- In Stock :
- 8,990
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- hFE Min :
- 80
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8541.21.00.95
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 500nA
- Collector Emitter Breakdown Voltage :
- 50V
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -50V
- Max Output Current :
- 100mA
- Transistor Type :
- PNP - Pre-Biased
- Min Operating Temperature :
- -55°C
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MMUN21**L
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Current Rating :
- -100mA
- Number of Elements :
- 1
- Width :
- 1.3mm
- Resistor - Base (R1) :
- 47 k Ω
- Continuous Collector Current :
- 100mA
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Polarity :
- PNP
- Collector Emitter Saturation Voltage :
- 250mV
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 50V
- Operating Supply Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Height :
- 940μm
- Length :
- 2.9mm
- Pin Count :
- 3
- Power Dissipation :
- 246mW
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 246mW
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Published :
- 2001
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO 1
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Datasheets
- MMUN2113LT1G
MMUN2113LT1G Documents

MMUN2113LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
MMUN2213LT1G Description
The ON Semiconductor MMUN2213LT1G is an NPN digital transistor in 3 pin SOT-23 (TO?236) package. The digital transistor is designed to replace a single device and its external resistor bias network.
MMUN2213LT1G Features
-
Simplifies Circuit Design
-
Reduces Board Space
-
Reduces Component Count
-
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MMUN2213LT1G Applications
-
Portable Devices
-
Consumer Electronics
-
Industrial
-
Power Management
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| MMUN2113LT3 | onsemi | 34,455 | TRANS PREBIAS PNP 246MW SOT23-3 |
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| MMUN2116LT1G | onsemi | 23,185 | TRANS PREBIAS PNP 50V SOT23-3 |
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