DRDNB16W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Element Configuration :

Single

Operating Supply Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

300mV

Mounting Type :

Surface Mount

Terminal Position :

Dual

Height :

1mm

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Length :

2.2mm

Transistor Type :

NPN - Pre-Biased + Diode

Resistor - Base (R1) :

1 k Ω

Frequency - Transition :

200MHz

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Base Part Number :

DRDNB16

Number of Elements :

1

Max Output Current :

600mA

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

6

Number of Pins :

6

Factory Lead Time :

19 Weeks

Width :

1.35mm

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Pbfree Code :

yes

hFE Min :

56

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Weight :

6.010099mg

Polarity :

NPN

Continuous Collector Current :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

600mA

Transition Frequency :

200MHz

Max Power Dissipation :

200mW

Max Collector Current :

600mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

50V

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

10 k Ω

Min Operating Temperature :

-55°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Published :

2008

Max Operating Temperature :

150°C