DRDNB16W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Width :

1.35mm

RoHS Status :

ROHS3 Compliant

Transition Frequency :

200MHz

Base Part Number :

DRDNB16

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Emitter Base Voltage (VEBO) :

5V

Package / Case :

6-TSSOP, SC-88, SOT-363

Current Rating :

600mA

Operating Supply Voltage :

50V

Max Collector Current :

600mA

Resistor - Emitter Base (R2) :

10 k Ω

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

6

Transistor Type :

NPN - Pre-Biased + Diode

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Weight :

6.010099mg

Number of Elements :

1

Polarity :

NPN

Max Operating Temperature :

150°C

Mount :

Surface Mount

Terminal Position :

Dual

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Continuous Collector Current :

600mA

Voltage - Rated DC :

50V

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Height :

1mm

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

200mW

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

1 k Ω

Element Configuration :

Single

Factory Lead Time :

19 Weeks

Packaging :

Tape and Reel (TR)

Frequency - Transition :

200MHz

Length :

2.2mm

Collector Emitter Voltage (VCEO) :

300mV

ECCN Code :

EAR99

Pin Count :

6

Number of Terminations :

6

Max Breakdown Voltage :

50V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Max Output Current :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

hFE Min :

56