DRDN010W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

18V

Factory Lead Time :

19 Weeks

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Terminal Position :

Dual

hFE Min :

150

Weight :

6.010099mg

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

100MHz

Transistor Type :

NPN + Diode (Isolated)

Number of Terminations :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Max Power Dissipation :

200mW

Published :

2008

Number of Elements :

1

Element Configuration :

Single

Max Collector Current :

1A

Width :

1.35mm

Vce Saturation (Max) @ Ib, Ic :

500mV @ 30mA, 300mA

Length :

2.2mm

Polarity :

NPN

Collector Base Voltage (VCBO) :

45V

Mount :

Surface Mount

Transition Frequency :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 1V

Radiation Hardening :

No

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Pin Count :

6

Current Rating :

1A

Height :

1mm

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Base Part Number :

DRDN010

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

18V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

18V

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

18V

Current - Collector Cutoff (Max) :

1μA ICBO