DRDN010W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

18V

Mount :

Surface Mount

Number of Terminations :

6

hFE Min :

150

Collector Emitter Breakdown Voltage :

18V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Base Part Number :

DRDN010

Transistor Type :

NPN + Diode (Isolated)

Max Breakdown Voltage :

18V

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

18V

Current - Collector Cutoff (Max) :

1μA ICBO

JESD-609 Code :

e3

Radiation Hardening :

No

Package / Case :

6-TSSOP, SC-88, SOT-363

Weight :

6.010099mg

Pbfree Code :

yes

Current Rating :

1A

Length :

2.2mm

Max Power Dissipation :

200mW

Polarity :

NPN

Gain Bandwidth Product :

100MHz

Published :

2008

Width :

1.35mm

Transistor Application :

SWITCHING

Max Collector Current :

1A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 1V

Height :

1mm

Number of Pins :

6

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

500mV @ 30mA, 300mA

Packaging :

Tape and Reel (TR)

Transition Frequency :

100MHz

Pin Count :

6

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

45V

Factory Lead Time :

19 Weeks