DRDN010W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

1μA ICBO

Collector Base Voltage (VCBO) :

45V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pbfree Code :

yes

Number of Pins :

6

Published :

2008

Height :

1mm

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

19 Weeks

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

500mV @ 30mA, 300mA

Number of Elements :

1

Length :

2.2mm

Max Power Dissipation :

200mW

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 1V

Terminal Position :

Dual

Max Collector Current :

1A

hFE Min :

150

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

18V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Voltage - Rated DC :

18V

Gain Bandwidth Product :

100MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Weight :

6.010099mg

Operating Temperature :

-55°C~150°C TJ

Polarity :

NPN

Transistor Type :

NPN + Diode (Isolated)

Current Rating :

1A

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

DRDN010

Mount :

Surface Mount

Element Configuration :

Single

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.35mm

Mounting Type :

Surface Mount

Max Breakdown Voltage :

18V

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

18V