DRDN010W-7

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Mfr.Part #
DRDN010W-7
Manufacturer
Diodes Incorporated
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRANS NPN 18V 1A SOT363
Stock
50,401
In Stock :
50,401

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
18V
Factory Lead Time :
19 Weeks
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Terminal Position :
Dual
hFE Min :
150
Weight :
6.010099mg
Time@Peak Reflow Temperature-Max (s) :
40
Gain Bandwidth Product :
100MHz
Transistor Type :
NPN + Diode (Isolated)
Number of Terminations :
6
Package / Case :
6-TSSOP, SC-88, SOT-363
Number of Pins :
6
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Max Power Dissipation :
200mW
Published :
2008
Number of Elements :
1
Element Configuration :
Single
Max Collector Current :
1A
Width :
1.35mm
Vce Saturation (Max) @ Ib, Ic :
500mV @ 30mA, 300mA
Length :
2.2mm
Polarity :
NPN
Collector Base Voltage (VCBO) :
45V
Mount :
Surface Mount
Transition Frequency :
100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 100mA 1V
Radiation Hardening :
No
Lead Free :
Lead Free
Emitter Base Voltage (VEBO) :
5V
Pin Count :
6
Current Rating :
1A
Height :
1mm
Terminal Finish :
Matte Tin (Sn)
Transistor Element Material :
SILICON
Base Part Number :
DRDN010
RoHS Status :
ROHS3 Compliant
Max Breakdown Voltage :
18V
Mounting Type :
Surface Mount
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Voltage - Rated DC :
18V
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
18V
Current - Collector Cutoff (Max) :
1μA ICBO
Datasheets
DRDN010W-7
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DRDN010W-7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Package / Case:6-TSSOP, SC-88, SOT-363, Number of Pins:6, Base Part Number:DRDN010, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, DRDN010W-7 pinout, DRDN010W-7 datasheet PDF, DRDN010W-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DRDN010W-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DRDN010W-7


NPN + Diode (Isolated) -55°C~150°C TJ 1μA ICBO 1 Elements 6 Terminations SILICON 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount

DRDN010W-7 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 18V volts.When collector current reaches its maximum, it can reach 1A volts.

DRDN010W-7 Features


the DC current gain for this device is 150 @ 100mA 1V
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz


DRDN010W-7 Applications


There are a lot of Diodes Incorporated
DRDN010W-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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