DRDN010W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

18V

hFE Min :

150

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

100MHz

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.35mm

Collector Emitter Voltage (VCEO) :

18V

Radiation Hardening :

No

Max Breakdown Voltage :

18V

Transition Frequency :

100MHz

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Max Power Dissipation :

200mW

Current Rating :

1A

Voltage - Rated DC :

18V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 1V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

1μA ICBO

Height :

1mm

Number of Elements :

1

Mount :

Surface Mount

Max Collector Current :

1A

Terminal Position :

Dual

ECCN Code :

EAR99

Transistor Type :

NPN + Diode (Isolated)

Packaging :

Tape and Reel (TR)

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Weight :

6.010099mg

Pin Count :

6

Base Part Number :

DRDN010

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 30mA, 300mA

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

19 Weeks

Length :

2.2mm

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2008

Collector Base Voltage (VCBO) :

45V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Number of Pins :

6