DRDN005W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Current Rating :

500mA

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

45V

Transistor Element Material :

SILICON

Width :

1.35mm

Gain Bandwidth Product :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Breakdown Voltage :

80V

Number of Pins :

6

Polarity :

NPN

Transition Frequency :

100MHz

Max Collector Current :

500mA

Frequency :

100MHz

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

80V

Package / Case :

6-TSSOP, SC-88, SOT-363

Length :

2.2mm

Element Configuration :

Single

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Base Part Number :

DRDN005

Transistor Type :

NPN + Diode (Isolated)

Number of Elements :

1

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Radiation Hardening :

No

Weight :

6.010099mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Published :

2008

Mount :

Surface Mount

Max Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Matte Tin (Sn)

Height :

1mm

Voltage - Rated DC :

80V

Current - Collector Cutoff (Max) :

100nA

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

250mV