DRDNB26W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

200MHz

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

NPN - Pre-Biased + Diode

Frequency - Transition :

200MHz

Length :

2.2mm

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Published :

2008

DC Current Gain (hFE) (Min) @ Ic, Vce :

47 @ 50mA 5V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Height :

1mm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Terminal Position :

Dual

Transistor Application :

SWITCHING

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Resistor - Emitter Base (R2) :

4.7 k Ω

Continuous Collector Current :

600mA

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Base Part Number :

DRDNB26

Pin Count :

6

Voltage - Rated DC :

50V

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Radiation Hardening :

No

JESD-609 Code :

e3

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Voltage (VCEO) :

300mV

Min Operating Temperature :

-55°C

Polarity :

NPN

Resistor - Base (R1) :

220 Ω

Pbfree Code :

yes

Factory Lead Time :

6 Weeks

Weight :

6.010099mg

Width :

1.35mm

Number of Pins :

6

Max Breakdown Voltage :

50V

Current Rating :

600mA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

47

Max Power Dissipation :

200mW

Element Configuration :

Single

Max Collector Current :

600mA