DRDNB26W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current Rating :

600mA

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

4.7 k Ω

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

600mA

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200mW

Number of Pins :

6

Max Collector Current :

600mA

Terminal Position :

Dual

Published :

2008

Collector Emitter Voltage (VCEO) :

300mV

hFE Min :

47

Transition Frequency :

200MHz

Mounting Type :

Surface Mount

Weight :

6.010099mg

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

47 @ 50mA 5V

Element Configuration :

Single

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Base Part Number :

DRDNB26

Factory Lead Time :

6 Weeks

Transistor Type :

NPN - Pre-Biased + Diode

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Height :

1mm

Number of Elements :

1

Polarity :

NPN

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

Frequency - Transition :

200MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Pbfree Code :

yes

Pin Count :

6

Resistor - Base (R1) :

220 Ω

Lead Free :

Lead Free

Max Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Width :

1.35mm

Min Operating Temperature :

-55°C

Length :

2.2mm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No