DRDNB26W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Radiation Hardening :

No

Width :

1.35mm

Voltage - Rated DC :

50V

Element Configuration :

Single

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

Max Power Dissipation :

200mW

Max Collector Current :

600mA

Pin Count :

6

Packaging :

Tape and Reel (TR)

Height :

1mm

Weight :

6.010099mg

Number of Terminations :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Operating Temperature :

150°C

Continuous Collector Current :

600mA

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Lead Free :

Lead Free

Transistor Type :

NPN - Pre-Biased + Diode

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Transition Frequency :

200MHz

Transistor Application :

SWITCHING

hFE Min :

47

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

4.7 k Ω

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

200MHz

Number of Elements :

1

Resistor - Base (R1) :

220 Ω

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Max Breakdown Voltage :

50V

Base Part Number :

DRDNB26

Published :

2008

Current Rating :

600mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

47 @ 50mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Length :

2.2mm

Number of Pins :

6