MMUN2214LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Contact Plating :

Tin

Pin Count :

3

Continuous Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

80

Number of Elements :

1

Width :

1.3mm

Published :

2001

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47 k Ω

Radiation Hardening :

No

Number of Terminations :

3

Operating Supply Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Output Current :

100mA

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Terminal Form :

Gull wing

Height :

940μm

Number of Pins :

3

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Transistor Type :

NPN - Pre-Biased

Max Breakdown Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

JESD-609 Code :

e3

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Saturation Voltage :

250mV

Polarity :

NPN

Current Rating :

100mA

Factory Lead Time :

4 Weeks

Max Power Dissipation :

246mW

REACH SVHC :

No SVHC

Voltage - Rated DC :

50V

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MMUN22**L

Package / Case :

TO-236-3, SC-59, SOT-23-3

Halogen Free :

Halogen Free

Length :

2.9mm

Max Collector Current :

100mA

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Power Dissipation :

246mW

Resistor - Base (R1) :

10 k Ω