MMUN2111LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Pins :

3

Voltage - Rated DC :

-50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

246mW

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Radiation Hardening :

No

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

1

Continuous Collector Current :

100mA

Factory Lead Time :

4 Weeks

Power Dissipation :

246mW

Transistor Type :

PNP - Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

40

Halogen Free :

Halogen Free

Max Collector Current :

100mA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

hFE Min :

35

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Lead Free :

Lead Free

Polarity :

PNP

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

50V

Contact Plating :

Tin

Resistor - Base (R1) :

10 k Ω

Current - Collector Cutoff (Max) :

500nA

Terminal Position :

Dual

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Current Rating :

-100mA

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

10 k Ω

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Base Part Number :

MMUN21**L

Max Breakdown Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Single

Number of Terminations :

3