MMUN2111LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

500nA

hFE Min :

35

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

10 k Ω

Max Operating Temperature :

150°C

Max Power Dissipation :

246mW

Number of Pins :

3

Published :

2007

Lead Free :

Lead Free

Voltage - Rated DC :

-50V

Factory Lead Time :

4 Weeks

Current Rating :

-100mA

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Terminal Position :

Dual

Transistor Type :

PNP - Pre-Biased

Max Collector Current :

100mA

Polarity :

PNP

Surface Mount :

yes

Pbfree Code :

yes

Pin Count :

3

Min Operating Temperature :

-55°C

Halogen Free :

Halogen Free

Power Dissipation :

246mW

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Base Part Number :

MMUN21**L

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Elements :

1

Resistor - Emitter Base (R2) :

10 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Single

Transistor Application :

SWITCHING

Continuous Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)