MMUN2111LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Number of Terminations :

3

Resistor - Base (R1) :

10 k Ω

Polarity :

PNP

JESD-609 Code :

e3

Lead Free :

Lead Free

Voltage - Rated DC :

-50V

Transistor Type :

PNP - Pre-Biased

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

100mA

Radiation Hardening :

No

Max Collector Current :

100mA

Factory Lead Time :

4 Weeks

Number of Elements :

1

Number of Pins :

3

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Current Rating :

-100mA

Power Dissipation :

246mW

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

246mW

Base Part Number :

MMUN21**L

Element Configuration :

Single

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Published :

2007

Resistor - Emitter Base (R2) :

10 k Ω

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Contact Plating :

Tin

Surface Mount :

yes

Terminal Form :

Gull wing

Pin Count :

3

hFE Min :

35

Halogen Free :

Halogen Free

Max Breakdown Voltage :

50V