MUN5111DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Continuous Collector Current :

-100mA

Width :

1.25mm

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Number of Elements :

2

Operating Supply Voltage :

50V

Collector Emitter Saturation Voltage :

250mV

Halogen Free :

Halogen Free

Base Part Number :

MUN51**DW1T

Resistor - Emitter Base (R2) :

10k Ω

Number of Terminations :

6

Mounting Type :

Surface Mount

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

hFE Min :

35

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Current Rating :

-100mA

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Surface Mount :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

Length :

2mm

Lead Free :

Lead Free

Max Collector Current :

100mA

Number of Pins :

6

Current - Collector Cutoff (Max) :

500nA

Max Operating Temperature :

150°C

Max Output Current :

100mA

Factory Lead Time :

8 Weeks

Resistor - Base (R1) :

10k Ω

Max Breakdown Voltage :

50V

Pin Count :

6

Pbfree Code :

yes

Voltage - Rated DC :

-50V

Polarity :

PNP

Height :

900μm

Max Power Dissipation :

250mW

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Power Dissipation :

250mW

JESD-609 Code :

e3