PUMD3,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector Cutoff (Max) :

1μA

Base Part Number :

P*MD3

Transition Frequency :

230MHz

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Power - Max :

300mW

Transistor Element Material :

SILICON

Surface Mount :

yes

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin (Sn)

Polarity :

NPN, PNP

ECCN Code :

EAR99

Terminal Form :

Gull wing

Voltage - Collector Emitter Breakdown (Max) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Published :

2013

Current - Collector (Ic) (Max) :

100mA

Number of Terminations :

6

Resistor - Base (R1) :

10k Ω

Resistor - Emitter Base (R2) :

10k Ω

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V