PUMD3,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

10k Ω

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Published :

2013

Number of Terminations :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Polarity :

NPN, PNP

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

50V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

100mA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Number of Elements :

2

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power - Max :

300mW

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

10k Ω

Transition Frequency :

230MHz

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Base Part Number :

P*MD3

Number of Pins :

6

Packaging :

Tape and Reel (TR)