PUMD3,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Emitter Base (R2) :

10k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

1μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

300mW

Max Collector Current :

100mA

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

P*MD3

Number of Elements :

2

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN, PNP

Max Operating Temperature :

150°C

Factory Lead Time :

4 Weeks

Element Configuration :

Dual

Published :

2013

Pin Count :

6

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

10k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Pins :

6

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Terminations :

6

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant