MUN5113T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

hFE Min :

80

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Voltage - Rated DC :

-50V

Package / Case :

SC-70, SOT-323

Power Dissipation :

310mW

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Contact Plating :

Tin

Factory Lead Time :

4 Weeks

Max Power Dissipation :

202mW

Min Operating Temperature :

-55°C

Number of Elements :

1

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Position :

Dual

Radiation Hardening :

No

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Resistor - Emitter Base (R2) :

47 k Ω

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MUN51**T

Transistor Type :

PNP - Pre-Biased

Pbfree Code :

yes

Published :

2009

Current - Collector Cutoff (Max) :

500nA

Continuous Collector Current :

100mA

Resistor - Base (R1) :

47 k Ω

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lead Free :

Lead Free

Number of Pins :

3

Current Rating :

-100mA

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

50V

Halogen Free :

Halogen Free

Pin Count :

3

Max Collector Current :

100mA

Polarity :

PNP

Collector Emitter Breakdown Voltage :

50V