MUN5111T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-50V

Current Rating :

-100mA

Factory Lead Time :

5 Weeks

Package / Case :

SC-70, SOT-323

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

202mW

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

100mA

Width :

1.35mm

Operating Supply Voltage :

50V

JESD-609 Code :

e3

Length :

2.2mm

Terminal Form :

Gull wing

Number of Elements :

1

Element Configuration :

Single

Lead Free :

Lead Free

Polarity :

PNP

Number of Pins :

3

Radiation Hardening :

No

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

hFE Min :

35

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

MUN51**T

Surface Mount :

yes

Published :

2006

Number of Terminations :

3

Min Operating Temperature :

-55°C

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

Max Output Current :

100mA

Max Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Saturation Voltage :

250mV

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Height :

900μm

REACH SVHC :

No SVHC

Max Power Dissipation :

202mW

Resistor - Base (R1) :

10 k Ω

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Contact Plating :

Tin

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

10 k Ω

Max Operating Temperature :

150°C

Continuous Collector Current :

100mA