MUN5111T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

Power Dissipation :

202mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Published :

2006

Surface Mount :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

250mV

Polarity :

PNP

Resistor - Emitter Base (R2) :

10 k Ω

ECCN Code :

EAR99

Max Power Dissipation :

202mW

Voltage - Rated DC :

-50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

5 Weeks

Max Output Current :

100mA

Height :

900μm

Pin Count :

3

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Width :

1.35mm

Number of Elements :

1

Base Part Number :

MUN51**T

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Halogen Free :

Halogen Free

Operating Supply Voltage :

50V

hFE Min :

35

Transistor Type :

PNP - Pre-Biased

Resistor - Base (R1) :

10 k Ω

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Pins :

3

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

-100mA

REACH SVHC :

No SVHC

Number of Terminations :

3

Radiation Hardening :

No

Length :

2.2mm

JESD-609 Code :

e3

Terminal Position :

Dual

Package / Case :

SC-70, SOT-323