MUN5111T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Width :

1.35mm

Collector Emitter Voltage (VCEO) :

50V

Continuous Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Radiation Hardening :

No

Resistor - Base (R1) :

10 k Ω

Max Power Dissipation :

202mW

Collector Emitter Saturation Voltage :

250mV

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Terminal Position :

Dual

Factory Lead Time :

5 Weeks

Number of Elements :

1

Surface Mount :

yes

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

10 k Ω

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Power Dissipation :

202mW

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Current Rating :

-100mA

Lead Free :

Lead Free

Transistor Type :

PNP - Pre-Biased

Operating Supply Voltage :

50V

Package / Case :

SC-70, SOT-323

Max Output Current :

100mA

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Collector Current :

100mA

Pin Count :

3

Number of Pins :

3

Min Operating Temperature :

-55°C

Length :

2.2mm

Voltage - Rated DC :

-50V

Contact Plating :

Tin

hFE Min :

35

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Base Part Number :

MUN51**T

Element Configuration :

Single

Published :

2006

Height :

900μm

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Polarity :

PNP

Packaging :

Tape and Reel (TR)