MUN5111T1G
- Mfr.Part #
- MUN5111T1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 50V SC70-3
- Stock
- 2,630
- In Stock :
- 2,630
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Collector Emitter Saturation Voltage :
- 250mV
- Published :
- 2006
- Power Dissipation :
- 202mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistor - Base (R1) :
- 10 k Ω
- Base Part Number :
- MUN51**T
- Continuous Collector Current :
- 100mA
- Max Output Current :
- 100mA
- Number of Terminations :
- 3
- Height :
- 900μm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 500nA
- Halogen Free :
- Halogen Free
- Operating Supply Voltage :
- 50V
- Terminal Form :
- Gull wing
- Width :
- 1.35mm
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- SC-70, SOT-323
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Length :
- 2.2mm
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Transistor Type :
- PNP - Pre-Biased
- Max Power Dissipation :
- 202mW
- ECCN Code :
- EAR99
- hFE Min :
- 35
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 50V
- Min Operating Temperature :
- -55°C
- JESD-609 Code :
- e3
- Polarity :
- PNP
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 5mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Packaging :
- Tape and Reel (TR)
- Max Operating Temperature :
- 150°C
- Max Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Surface Mount :
- yes
- Voltage - Rated DC :
- -50V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 5 Weeks
- Current Rating :
- -100mA
- Datasheets
- MUN5111T1G

MUN5111T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
MUN5111T1G Description
The ON Semiconductor MUN5111T1G is designed to replace a single device and its external resistor bias network.
MUN5111T1G Features
-
Simplifies Circuit Design
-
Reduces Board Space
-
Reduces Component Count
-
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
MUN5111T1G Applications
-
-
Consumer Electronics
-
Portable Devices
-
Industrial
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