MUN5111T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Continuous Collector Current :

100mA

Mounting Type :

Surface Mount

Voltage - Rated DC :

-50V

Collector Emitter Saturation Voltage :

250mV

Length :

2.2mm

Polarity :

PNP

Factory Lead Time :

5 Weeks

Package / Case :

SC-70, SOT-323

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Height :

900μm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Radiation Hardening :

No

Width :

1.35mm

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Transistor Type :

PNP - Pre-Biased

Terminal Form :

Gull wing

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Current Rating :

-100mA

Lead Free :

Lead Free

Max Breakdown Voltage :

50V

Surface Mount :

yes

Published :

2006

Operating Supply Voltage :

50V

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Number of Terminations :

3

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Output Current :

100mA

Resistor - Base (R1) :

10 k Ω

Power Dissipation :

202mW

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

1

Halogen Free :

Halogen Free

Pin Count :

3

Current - Collector Cutoff (Max) :

500nA

hFE Min :

35

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Base Part Number :

MUN51**T

Max Power Dissipation :

202mW

Contact Plating :

Tin

Resistor - Emitter Base (R2) :

10 k Ω

Pbfree Code :

yes