MUN5112DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Halogen Free :

Halogen Free

Number of Elements :

2

hFE Min :

60

Max Power Dissipation :

250mW

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

250mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Base Part Number :

MUN51**DW1T

Surface Mount :

yes

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

2 Weeks

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Pins :

6

Element Configuration :

Dual

Resistor - Emitter Base (R2) :

22k Ω

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Current Rating :

-100mA

Collector Emitter Voltage (VCEO) :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

ECCN Code :

EAR99

Number of Terminations :

6

Resistor - Base (R1) :

22k Ω

Min Operating Temperature :

-55°C

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Voltage - Rated DC :

-50V

Mounting Type :

Surface Mount

Continuous Collector Current :

-100mA

Published :

2009

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Pin Count :

6