MUN5115DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Continuous Collector Current :

-100mA

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

250mW

Min Operating Temperature :

-55°C

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Base Part Number :

MUN51**DW1T

JESD-609 Code :

e3

Radiation Hardening :

No

Current Rating :

-100mA

Resistor - Base (R1) :

10k Ω

Lead Free :

Lead Free

Number of Elements :

2

Additional Feature :

BUILT-IN BIAS RESISTOR

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Power Dissipation :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Voltage - Rated DC :

-50V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Pins :

6

Pin Count :

6

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

6

Polarity :

PNP

hFE Min :

160

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Halogen Free :

Halogen Free

Pbfree Code :

yes

Element Configuration :

Dual

Published :

2009