PUMD3,165

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Lead Free :

Lead Free

Min Operating Temperature :

-65°C

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

P*MD3

Element Configuration :

Dual

Factory Lead Time :

4 Weeks

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Published :

2008

Resistor - Emitter Base (R2) :

10k Ω

Current - Collector Cutoff (Max) :

1μA

Number of Pins :

6

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

10k Ω

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Pin Count :

6

Polarity :

NPN, PNP

Terminal Finish :

Tin (Sn)

Transition Frequency :

230MHz

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Terminal Form :

Gull wing

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Voltage (VCEO) :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Terminations :

6