PUMD12,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Polarity :

NPN, PNP

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

1μA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Mounting Type :

Surface Mount

Pin Count :

6

Number of Elements :

2

Element Configuration :

Dual

Max Operating Temperature :

150°C

Resistor - Base (R1) :

47k Ω

Number of Terminations :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Frequency - Transition :

230MHz 180MHz

Resistor - Emitter Base (R2) :

47k Ω

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V