PUMD10,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Frequency - Transition :

230MHz

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Factory Lead Time :

4 Weeks

Power - Max :

300mW

Resistor - Emitter Base (R2) :

47k Ω

Published :

2003

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Pin Count :

6

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

100mA

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Base Part Number :

MD10

HTS Code :

8541.21.00.95

Polarity :

NPN, PNP

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

ECCN Code :

EAR99

Transition Frequency :

230MHz

Number of Elements :

2

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Base (R1) :

2.2k Ω

Operating Temperature (Max) :

150°C