PUMD12,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Current - Collector Cutoff (Max) :

1μA

Number of Pins :

6

Power - Max :

300mW

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2004

Transistor Application :

SWITCHING

Voltage - Collector Emitter Breakdown (Max) :

50V

Number of Elements :

2

Operating Temperature (Max) :

150°C

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Pin Count :

6

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Resistor - Base (R1) :

47k Ω

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Frequency - Transition :

230MHz 180MHz

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Number of Terminations :

6

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max) :

100mA

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MD12

Package / Case :

6-TSSOP, SC-88, SOT-363

HTS Code :

8541.21.00.95

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Resistor - Emitter Base (R2) :

47k Ω