PUMD10,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Published :

2011

Base Part Number :

MD10

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Polarity :

NPN, PNP

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Transition Frequency :

230MHz

Mounting Type :

Surface Mount

Element Configuration :

Dual

Min Operating Temperature :

-65°C

Current - Collector Cutoff (Max) :

1μA

Number of Elements :

2

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

Resistor - Emitter Base (R2) :

47k Ω

Max Collector Current :

100mA

Number of Pins :

6

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

2.2k Ω

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Pin Count :

6

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

50V