PUMD10,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transition Frequency :

230MHz

Power - Max :

300mW

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Emitter Base (R2) :

47k Ω

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector Cutoff (Max) :

100nA ICBO

Surface Mount :

yes

Transistor Application :

SWITCHING

Published :

2003

Terminal Finish :

Tin (Sn)

Pin Count :

6

Number of Terminations :

6

HTS Code :

8541.21.00.95

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN, PNP

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Number of Pins :

6

Transistor Element Material :

SILICON

Frequency - Transition :

230MHz

Resistor - Base (R1) :

2.2k Ω

Current - Collector (Ic) (Max) :

100mA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Base Part Number :

MD10

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Operating Temperature (Max) :

150°C

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA