PUMD2,125

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

22k Ω

Published :

2011

Polarity :

NPN, PNP

Max Power Dissipation :

300mW

Transistor Application :

SWITCHING

Mount :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Pin Count :

6

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Min Operating Temperature :

-65°C

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

22k Ω

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

Max Collector Current :

100mA

Base Part Number :

MD2

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V