PUMD2,125

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Resistor - Emitter Base (R2) :

22k Ω

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Published :

2011

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Number of Pins :

6

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Current - Collector Cutoff (Max) :

1μA

Terminal Finish :

Tin (Sn)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-65°C

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Pin Count :

6

Number of Elements :

2

Transistor Application :

SWITCHING

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

22k Ω

Base Part Number :

MD2

Element Configuration :

Dual