PUMD3,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Terminations :

6

Polarity :

NPN, PNP

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Factory Lead Time :

4 Weeks

Number of Elements :

2

Base Part Number :

P*MD3

Current - Collector (Ic) (Max) :

100mA

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Base (R1) :

10k Ω

JESD-609 Code :

e3

Surface Mount :

yes

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Number of Pins :

6

Resistor - Emitter Base (R2) :

10k Ω

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Current - Collector Cutoff (Max) :

1μA

Terminal Finish :

Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

50V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Published :

2013

Power - Max :

300mW

RoHS Status :

ROHS3 Compliant

Transition Frequency :

230MHz