MUN5233DW1T1G

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Mfr.Part #
MUN5233DW1T1G
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRANS PREBIAS 2NPN 50V SC88
Stock
27,918
In Stock :
27,918

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Power Dissipation :
187mW
Current Rating :
100mA
Max Power Dissipation :
250mW
Min Operating Temperature :
-55°C
Additional Feature :
BUILT-IN BIAS RESISTOR RATIO IS 10
Factory Lead Time :
8 Weeks
Surface Mount :
yes
Number of Elements :
2
Number of Terminations :
6
Vce Saturation (Max) @ Ib, Ic :
250mV @ 1mA, 10mA
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Number of Pins :
6
Transistor Type :
2 NPN - Pre-Biased (Dual)
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
50V
Peak Reflow Temperature (Cel) :
260
Continuous Collector Current :
100mA
Package / Case :
6-TSSOP, SC-88, SOT-363
Pin Count :
6
Polarity :
NPN
Current - Collector Cutoff (Max) :
500nA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Time@Peak Reflow Temperature-Max (s) :
40
Resistor - Emitter Base (R2) :
47k Ω
JESD-609 Code :
e3
Terminal Form :
Gull wing
Max Operating Temperature :
150°C
Mounting Type :
Surface Mount
Base Part Number :
MUN52**DW1T
Voltage - Rated DC :
50V
Operating Supply Voltage :
50V
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Radiation Hardening :
No
Resistor - Base (R1) :
4.7k Ω
Terminal Finish :
Tin (Sn)
Max Output Current :
100mA
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA 10V
Collector Emitter Breakdown Voltage :
50V
Pbfree Code :
yes
Max Collector Current :
100mA
Published :
2005
Max Breakdown Voltage :
50V
hFE Min :
80
Element Configuration :
Dual
Packaging :
Tape and Reel (TR)
Datasheets
MUN5233DW1T1G
Introducing Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi MUN5233DW1T1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Number of Pins:6, Package / Case:6-TSSOP, SC-88, SOT-363, Mounting Type:Surface Mount, Base Part Number:MUN52**DW1T, MUN5233DW1T1G pinout, MUN5233DW1T1G datasheet PDF, MUN5233DW1T1G amp .Beyond Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi MUN5233DW1T1G ,we also offer PUMD2,125, PUMD2,115, PUMD2,165, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MUN5233DW1T1G


MUN5233DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at

The ON Semiconductor MUN5233DW1T1G is a pre-biased, two-NPN transistor array in a SOT-363 package. It is designed for use in low-power, low-voltage applications. The device features a low collector-emitter saturation voltage of 0.25W and a low collector-emitter voltage of 0.25V. It is suitable for use in a wide range of applications, including switching, amplification, and signal conditioning.

Features of the MUN5233DW1T1G include:
• Low collector-emitter saturation voltage of 0.25W
• Low collector-emitter voltage of 0.25V
• Low power consumption
• High gain
• High switching speed
• Low noise
• High reliability

Applications of the MUN5233DW1T1G include:
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical
• Power management
• Lighting
• Audio/video
• Security systems
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