MUN5233DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pbfree Code :

yes

hFE Min :

80

Current - Collector Cutoff (Max) :

500nA

Current Rating :

100mA

Base Part Number :

MUN52**DW1T

REACH SVHC :

No SVHC

Transistor Type :

2 NPN - Pre-Biased (Dual)

Power Dissipation :

187mW

Mounting Type :

Surface Mount

Polarity :

NPN

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Terminal Form :

Gull wing

Element Configuration :

Dual

Resistor - Base (R1) :

4.7k Ω

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Surface Mount :

yes

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Number of Terminations :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

47k Ω

Number of Pins :

6

Max Output Current :

100mA

Max Power Dissipation :

250mW

Continuous Collector Current :

100mA

Voltage - Rated DC :

50V

JESD-609 Code :

e3

Operating Supply Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-55°C

Published :

2005

Package / Case :

6-TSSOP, SC-88, SOT-363

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)