MUN5233DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

4.7k Ω

Number of Terminations :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Package / Case :

6-TSSOP, SC-88, SOT-363

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

250mW

Min Operating Temperature :

-55°C

Continuous Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Base Part Number :

MUN52**DW1T

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Power Dissipation :

187mW

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Output Current :

100mA

Number of Pins :

6

Pin Count :

6

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Lead Free :

Lead Free

Operating Supply Voltage :

50V

Surface Mount :

yes

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

hFE Min :

80

Radiation Hardening :

No

Pbfree Code :

yes

Mounting Type :

Surface Mount

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Transistor Application :

SWITCHING

Published :

2005

Voltage - Rated DC :

50V

REACH SVHC :

No SVHC

Current Rating :

100mA

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

47k Ω

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

50V

JESD-609 Code :

e3