MUN5233DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pbfree Code :

yes

Voltage - Rated DC :

50V

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Max Output Current :

100mA

ECCN Code :

EAR99

Radiation Hardening :

No

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Pin Count :

6

Min Operating Temperature :

-55°C

Surface Mount :

yes

Power Dissipation :

187mW

Mounting Type :

Surface Mount

Base Part Number :

MUN52**DW1T

Number of Elements :

2

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Transistor Type :

2 NPN - Pre-Biased (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Published :

2005

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Element Configuration :

Dual

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

100mA

hFE Min :

80

Operating Supply Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Resistor - Base (R1) :

4.7k Ω

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Polarity :

NPN

JESD-609 Code :

e3

Lead Free :

Lead Free

Max Power Dissipation :

250mW

Peak Reflow Temperature (Cel) :

260

Current Rating :

100mA

Factory Lead Time :

8 Weeks

Resistor - Emitter Base (R2) :

47k Ω

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

6