MUN5233T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Resistor - Base (R1) :

4.7 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Polarity :

NPN

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Transistor Type :

NPN - Pre-Biased

Current Rating :

100mA

Pin Count :

3

Number of Elements :

1

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

260

Published :

2007

Package / Case :

SC-70, SOT-323

Number of Terminations :

3

Base Part Number :

MUN52**T

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

5 Weeks

ECCN Code :

EAR99

Continuous Collector Current :

100mA

Surface Mount :

yes

Max Power Dissipation :

202mW

Voltage - Rated DC :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Max Operating Temperature :

150°C

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Number of Pins :

3

hFE Min :

80

Pbfree Code :

yes

Power Dissipation :

202mW

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Resistor - Emitter Base (R2) :

47 k Ω

Current - Collector Cutoff (Max) :

500nA

Contact Plating :

Tin