MUN5232T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

202mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Max Operating Temperature :

150°C

Terminal Position :

Dual

Mounting Type :

Surface Mount

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Min Operating Temperature :

-55°C

Current Rating :

100mA

Surface Mount :

yes

Voltage - Rated DC :

50V

Power Dissipation :

310mW

Published :

2007

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Base Part Number :

MUN52**T

Terminal Form :

Gull wing

Resistor - Base (R1) :

4.7 k Ω

Peak Reflow Temperature (Cel) :

260

Package / Case :

SC-70, SOT-323

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Max Collector Current :

100mA

Continuous Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

15

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

4.7 k Ω

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Polarity :

NPN

Transistor Type :

NPN - Pre-Biased

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Pin Count :

3

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Pbfree Code :

yes