MUN5231T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Form :

Gull wing

ECCN Code :

EAR99

Element Configuration :

Single

Pin Count :

3

Max Power Dissipation :

202mW

Terminal Finish :

Tin (Sn)

Published :

2009

Terminal Position :

Dual

Voltage - Rated DC :

50V

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Continuous Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

2.2 k Ω

Number of Terminations :

3

Package / Case :

SC-70, SOT-323

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

hFE Min :

8

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Power Dissipation :

202mW

Max Operating Temperature :

150°C

Current Rating :

100mA

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

Lead Free :

Lead Free

JESD-609 Code :

e3

Factory Lead Time :

2 Weeks

Halogen Free :

Halogen Free

Base Part Number :

MUN52**T

Min Operating Temperature :

-55°C

Polarity :

NPN

Surface Mount :

yes

Number of Pins :

3

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Transistor Type :

NPN - Pre-Biased

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

2.2 k Ω