MUN5230T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Form :

Gull wing

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Collector Emitter Voltage (VCEO) :

50V

Halogen Free :

Halogen Free

Terminal Position :

Dual

Voltage - Rated DC :

50V

Element Configuration :

Single

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Power Dissipation :

202mW

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

202mW

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Resistor - Emitter Base (R2) :

1 k Ω

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Polarity :

NPN

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Resistor - Base (R1) :

1 k Ω

Current Rating :

100mA

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

HTS Code :

8541.21.00.95

Transistor Type :

NPN - Pre-Biased

Min Operating Temperature :

-55°C

Operating Supply Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Published :

2009

Package / Case :

SC-70, SOT-323

Base Part Number :

MUN52**T

Pin Count :

3

Radiation Hardening :

No

Number of Elements :

1

Pbfree Code :

yes

Continuous Collector Current :

100mA

Factory Lead Time :

2 Weeks

Max Output Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA