MUN5215T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Polarity :

NPN

Width :

1.24mm

Max Operating Temperature :

150°C

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Continuous Collector Current :

100mA

Voltage - Rated DC :

50V

REACH SVHC :

No SVHC

Length :

2.2mm

Number of Terminations :

3

Max Frequency :

10kHz

Transistor Type :

NPN - Pre-Biased

Element Configuration :

Single

Base Part Number :

MUN52**T

Number of Elements :

1

Height :

850μm

Power Dissipation :

202mW

ECCN Code :

EAR99

Max Power Dissipation :

202mW

Number of Pins :

3

Min Operating Temperature :

-55°C

Package / Case :

SC-70, SOT-323

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Pin Count :

3

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Collector Base Voltage (VCBO) :

50V

Published :

2003

JESD-609 Code :

e3

hFE Min :

160

Max Breakdown Voltage :

50V

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Pbfree Code :

yes

Terminal Position :

Dual

Resistor - Base (R1) :

10 k Ω

Factory Lead Time :

5 Weeks

Operating Supply Voltage :

50V

Current Rating :

100mA

Max Output Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Collector Emitter Saturation Voltage :

250mV

Collector Emitter Breakdown Voltage :

50V