MUN5215T1G
- Mfr.Part #
- MUN5215T1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V SC70-3
- Stock
- 23,522
- In Stock :
- 23,522
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Terminal Form :
- Gull wing
- Package / Case :
- SC-70, SOT-323
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Max Power Dissipation :
- 202mW
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 500nA
- Max Frequency :
- 10kHz
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Resistor - Base (R1) :
- 10 k Ω
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 250mV
- Width :
- 1.24mm
- Mounting Type :
- Surface Mount
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Min Operating Temperature :
- -55°C
- Transistor Type :
- NPN - Pre-Biased
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 5mA 10V
- Max Operating Temperature :
- 150°C
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Supply Voltage :
- 50V
- Element Configuration :
- Single
- Current Rating :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 160
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Max Output Current :
- 100mA
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MUN52**T
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Polarity :
- NPN
- Factory Lead Time :
- 5 Weeks
- Published :
- 2003
- RoHS Status :
- ROHS3 Compliant
- Height :
- 850μm
- Collector Base Voltage (VCBO) :
- 50V
- Continuous Collector Current :
- 100mA
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- Length :
- 2.2mm
- Voltage - Rated DC :
- 50V
- Power Dissipation :
- 202mW
- Datasheets
- MUN5215T1G

MUN5215T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
MUN5215T1G Description
ON Semiconductor's MUN5215T1G NPN Bipolar Digital Transistor (BRT) is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a single transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. By integrating these different components into a single unit, the BRT eliminates them.
MUN5215T1G Features
-
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
-
Simplifies Circuit Design
-
Reduces Board Space
-
Reduces Component Count
MUN5215T1G Applications
-
Industrial
-
Automotive
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