MUN5213T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

47 k Ω

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

202mW

Transistor Application :

SWITCHING

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Radiation Hardening :

No

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Operating Supply Voltage :

50V

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Published :

2003

JESD-609 Code :

e3

hFE Min :

80

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Elements :

1

Base Part Number :

MUN52**T

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lead Free :

Lead Free

Continuous Collector Current :

100mA

Terminal Form :

Gull wing

Element Configuration :

Single

Max Collector Current :

100mA

Voltage - Rated DC :

50V

Resistor - Base (R1) :

47 k Ω

Contact Plating :

Tin

Current Rating :

100mA

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Max Output Current :

100mA

Max Power Dissipation :

202mW

Number of Pins :

3

REACH SVHC :

No SVHC

Factory Lead Time :

5 Weeks

Package / Case :

SC-70, SOT-323

Transistor Type :

NPN - Pre-Biased