MUN5213T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector Cutoff (Max) :

500nA

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Resistor - Base (R1) :

47 k Ω

Terminal Position :

Dual

ECCN Code :

EAR99

Max Breakdown Voltage :

50V

Continuous Collector Current :

100mA

Base Part Number :

MUN52**T

Max Power Dissipation :

202mW

hFE Min :

80

Surface Mount :

yes

Terminal Form :

Gull wing

Polarity :

NPN

Max Output Current :

100mA

Resistor - Emitter Base (R2) :

47 k Ω

Halogen Free :

Halogen Free

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Type :

NPN - Pre-Biased

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Operating Supply Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

3

Power Dissipation :

202mW

Max Collector Current :

100mA

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Package / Case :

SC-70, SOT-323

Pbfree Code :

yes

Published :

2003

Lead Free :

Lead Free

Number of Pins :

3

Number of Elements :

1

REACH SVHC :

No SVHC

Current Rating :

100mA

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

50V

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V